Barrier-confinement-controlled carrier transport into quantum wires
Identifieur interne : 002010 ( France/Analysis ); précédent : 002009; suivant : 002011Barrier-confinement-controlled carrier transport into quantum wires
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Abstract
By using subpicosecond laser light pulses with a polarization perpendicular to deep etched In0.53Ga0.47As/InP quantum wires, initial spatial electron-hole distributions have been prepared that are predominantly located in the unpatterned InP buffer layer. Under these excitation conditions the photoluminescence rise time increases significantly with decreasing wire width from about 25 ps for a two-dimensional unetched reference structure to about 150 ps for 34-nm-wide wires. Temperature-dependent studies of the rise times indicate the existence of an effective barrier in the InP regions of the quantum wires. From detailed calculations of the electronic states, which extend from the unpatterned InP buffer into the quantum wires, we show that confinement effects in the InP barriers control the carrier transport from the buffer into the In0.53Ga0.47As wire.
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Braun</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName><orgName type="university">Université de Wurtzbourg</orgName></affiliation></author><author><name sortKey="Wang, K H" uniqKey="Wang K">K. H. Wang</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName><orgName type="university">Université de Wurtzbourg</orgName></affiliation></author><author><name sortKey="Forchel, A" uniqKey="Forchel A">A. Forchel</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName><orgName type="university">Université de Wurtzbourg</orgName></affiliation></author><author><name sortKey="Knipp, P A" uniqKey="Knipp P">P. A. Knipp</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Computer Science, Christopher Newport University, Newport News, Virginia 23606</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Physics and Computer Science, Christopher Newport University, Newport News</wicri:cityArea></affiliation></author><author><name sortKey="Reinecke, T L" uniqKey="Reinecke T">T. L. Reinecke</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart</wicri:regionArea><wicri:noRegion>70569 Stuttgart</wicri:noRegion><wicri:noRegion>D-70569 Stuttgart</wicri:noRegion></affiliation><affiliation wicri:level="4"><inist:fA14 i1="04"><s1>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName><orgName type="university">Université de Wurtzbourg</orgName></affiliation></author><author><name sortKey="Pagnod Rossiaux, Ph" uniqKey="Pagnod Rossiaux P">Ph. Pagnod-Rossiaux</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>Alcatel-Alsthom Recherche, F-91460 Marcoussis, France</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Alcatel-Alsthom Recherche, F-91460 Marcoussis</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author><author><name sortKey="Goldstein, L" uniqKey="Goldstein L">L. Goldstein</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>Alcatel-Alsthom Recherche, F-91460 Marcoussis, France</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Alcatel-Alsthom Recherche, F-91460 Marcoussis</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0558101</idno><date when="1995-10-15">1995-10-15</date><idno type="stanalyst">PASCAL 95-0558101 AIP</idno><idno type="RBID">Pascal:95-0558101</idno><idno type="wicri:Area/Main/Corpus">01BB65</idno><idno type="wicri:Area/Main/Repository">01B637</idno><idno type="wicri:Area/France/Extraction">002010</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. Rev. B</title><title level="j" type="main">Physical Review B (Condensed Matter)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carriers</term><term>Confinement</term><term>Dynamics</term><term>Experimental study</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Indium phosphides</term><term>Photoluminescence</term><term>Polarization</term><term>Quantum wires</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>7847</term><term>7855C</term><term>Porteur charge</term><term>Confinement</term><term>Dynamique</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Indium phosphure</term><term>Photoluminescence</term><term>Polarisation</term><term>Fil quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">By using subpicosecond laser light pulses with a polarization perpendicular to deep etched In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP quantum wires, initial spatial electron-hole distributions have been prepared that are predominantly located in the unpatterned InP buffer layer. Under these excitation conditions the photoluminescence rise time increases significantly with decreasing wire width from about 25 ps for a two-dimensional unetched reference structure to about 150 ps for 34-nm-wide wires. Temperature-dependent studies of the rise times indicate the existence of an effective barrier in the InP regions of the quantum wires. From detailed calculations of the electronic states, which extend from the unpatterned InP buffer into the quantum wires, we show that confinement effects in the InP barriers control the carrier transport from the buffer into the In<sub>0.53</sub>Ga<sub>0.47</sub>As wire.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. Rev. 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L.)</s1></fA11><fA11 i1="07" i2="1"><s1>PAGNOD-ROSSIAUX (Ph.)</s1></fA11><fA11 i1="08" i2="1"><s1>GOLDSTEIN (L.)</s1></fA11><fA14 i1="01"><s1>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Computer Science, Christopher Newport University, Newport News, Virginia 23606</s1><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany</s1><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany</s1><sZ>6 aut.</sZ></fA14><fA14 i1="05"><s1>Alcatel-Alsthom Recherche, F-91460 Marcoussis, France</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>11595-11598</s1></fA20><fA21><s1>1995-10-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144B</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0558101</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical Review B (Condensed Matter)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>By using subpicosecond laser light pulses with a polarization perpendicular to deep etched In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP quantum wires, initial spatial electron-hole distributions have been prepared that are predominantly located in the unpatterned InP buffer layer. Under these excitation conditions the photoluminescence rise time increases significantly with decreasing wire width from about 25 ps for a two-dimensional unetched reference structure to about 150 ps for 34-nm-wide wires. Temperature-dependent studies of the rise times indicate the existence of an effective barrier in the InP regions of the quantum wires. 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